temperature dependence of phase transformation pressure in silicon

نویسندگان

b. salehpour

چکیده

in this experimental work the pressure induced phase transformation of silicon and germaniumhas been studied. it was shown that at a particular value of applied pressure, (pt), depending on the sampletemperature, the electrical resistance of the specimen falls off to a metallic state. the main goal of this studywas to find out how the phase transformation pressure, pt, for a p-type silicon varies with the sampletemperature. the results show that, the value of pt decreases linearly as the temperature of the sampleincreases. meanwhile, other related results including the rate of resistance change in accordance with appliedpressure on the sample at different temperatures (~270-350k), both for the semiconductor and the metallicstate of the specimen were determined. in another effort, the amount of pt for an n-type germanium, but onlyat room temperature, was also determined.

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عنوان ژورنال:
iranian journal of science and technology (sciences)

ISSN 1028-6276

دوره 30

شماره 3 2006

میزبانی شده توسط پلتفرم ابری doprax.com

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